Advanced Power MOSFET
Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Te chnology Lower Input Capacitance Improv ed Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Ma x.
) @ VDS = -200V Lower RDS(ON) : 1.
111 Ω (Typ.
) 1 SFR/U9220 BVDSS = -200 V RDS(on) = 1.
5 Ω ID = -3.
1 A D-PAK 2 1 3 I-PAK 2 3 1.
Gate 2.
Drain 3.
S ource Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Ch aracteristic Drain-to-Source Voltage Co ntinuous Drain Current (TC=25 C) Contin uous Drain Current (TC=100 C) Drain Cur rent-Pulsed Gate-to-Source Voltage Sing le Pulsed Avalanche .